KM416C1200B |
RFQ for KM416C1200B Required Field |
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| Product | Manufacturers | Pack | D/C |
| KM416C1200B | - | - | - |
This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-5,-6 or -7), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CASbefore- RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 1Mx16 Fast Page Mode DRAM family is fabricated using Samsung's advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.
Features |
| · Part Identification- KM416C1000B/B-L (5V, 4K Ref.)- KM416C1200B/B-L (5V, 1K Ref.)- KM416V1000B/B-L (3.3V, 4K Ref.)- KM416V1200B/B-L (3.3V, 1K Ref.)· Fast Page Mode operation· 2 CAS Byte/Word Read/Write operation· CAS-before-RAS refresh capability· RAS-only and Hidden refresh capability· Self-refresh capability (L-ver only)· TTL(5V)/LVTTL(3.3V) compatible inputs and outputs· Early Write or output enable controlled write· JEDEC Standard pinout· Available in 42-pin SOJ 400mil and 50(44)-pin TSOP(II) 400mil packages· Single +5V¡¾10% power supply (5V product)· Single +3.3V¡¾0.3V power supply (3.3V product) |
| Parameter | Symbol | Rating 3.3V | Rating5V | Unit |
| Voltage on any pin relative to VSS | VIN, VOUT | -0.5 to +4.6 | -1.0 to +7.0 | V |
| Voltage on VCC supply relative to VSS | VCC | -0.5 to +4.6 | -1.0 to +7.0 | V |
| Storage temperature | TSTG | -55 to +150 | -55 ~ +150 | °C |
| Power dissipation | PD | 1.0 | 1.0 | W |
| Short circuit current | IOS | 50 | 50 | mA |
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
